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Contact pressure and flow features of chemical mechanical polishing/planarization (CMP) process were analyzed, taking advantage of the one-dimensional contact model of two layers and considering slurry flows. In this model, deformations of the bulk pad substrate and the asperities were considered. The deformations of the bulk pad substrate and the asperity layer, as well as the contact pressure and fluid pressure, were revealed with numerical methods. Numerical simulation results show a counterintuitive phenomenon: a diverging clearance is formed in the leading region of the wafer and thereby it gives rise to a suction pressure (subambient pressure). A high stress concentration is presented at the wafer edge and thereby over polishing can be introduced. The research provides some theoretical explanations for these two fundamental features of usual CMP processes.

作 者：ZHANG Chaohui LUO Jianbin LIU Jinquan DU Yongping 作者单位：ZHANG Chaohui,LIU Jinquan,DU Yongping(School of Mechanical, Electronic and Control Engineering, Beijing Jiaotong University, Beijing 100044, China)

LUO Jianbin(State Key Laboratory of Tribology, Tsinghua University, Beijing 100084, China)

刊 名：科学通报（英文版） SCI英文刊名：CHINESE SCIENCE BULLETIN 年，卷(期)：2006 51(18) 分类号：O6 关键词：chemical mechanical polishing contact stress subambient fluid pressure